We study the influence on the photocurrent of the final state in bound-to-quasibound transitions in self-assembled quantum dot infrared photodetectors. We investigate two structures designed to explore different mechanisms of carrier extraction and therefore achieve a better insight on these processes. We observe photocurrent in opposite directions, with positive and negative sign, for different incident frequencies at the same applied external electric field. This phenomenon is attributed to the asymmetry of the potential barriers surrounding the quantum dots.