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American Institute of Physics, Applied Physics Letters, 23(92), p. 233507

DOI: 10.1063/1.2942385

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Defect-induced degradation of rectification properties of aged Pt/n-InxZn1-xOy Schottky diodes

Journal article published in 2008 by K. H. Kim, B. S. Kang, M.-J. Lee ORCID, S.-E. Ahn, C. B. Lee, G. Stefanovich, W. X. Xianyu, K.-K. Kim, J. S. Kim, I. K. Yoo, Y. Park
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This paper is available in a repository.

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Abstract

In this study, Pt/IZO (InxZn1-xOy) Schottky diodes were fabricated and the degradation phenomenon was investigated. The Pt/IZO Schottky diodes showed a rectifying ratio of 105, however, the electrical properties were degraded with aging. An increase in defect and carrier concentrations was observed from capacitance-voltage analysis and photoluminescence in the aged Pt/IZO Schottky diode. The degradation of the rectifying properties of the aged diodes originates possibly from the electron tunneling due to the increased defect concentrations.