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IOP Publishing, Nanotechnology, 2(21), p. 025304, 2009

DOI: 10.1088/0957-4484/21/2/025304

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A Novel Route for the Inclusion of Metal Dopants in Silicon

Journal article published in 2009 by Jules A. Gardener, Irving Liaw, Gabriel Aeppli, Ian W. Boyd ORCID, Richard J. Chater, Tim S. (Tim S.) Jones, David S. McPhail, Gopinathan Sankar, A. Marshall Stoneham, A. Marshall Stoneham, Marcin Sikora, Geoff Thornton, Sandrine Heutz
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Abstract

We report a new method to introduce metal atoms into silicon wafers, using negligible thermal budget. Molecular thin films are irradiated with ultra-violet (UV) light releasing metal species into the semiconductor substrate. Secondary ion mass spectrometry (SIMS) and X-ray absorption spectroscopy (XAS) show that Mn is incorporated into Si as an interstitial dopant. We propose that our method can form the basis of a generic low-cost, low-temperature technology that could lead to the creation of ordered dopant arrays. ; Comment: 12 pages, 3 figures