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American Physical Society, Physical review B, 23(70)

DOI: 10.1103/physrevb.70.233304

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Epitaxial growth and magnetic properties of half-metallicFe3O4on GaAs(100)

Journal article published in 2004 by Y. X. Lu, J. S. Claydon, Y. B. Xu, S. M. Thompson, K. Wilson ORCID, G. van der Laan ORCID
This paper is available in a repository.
This paper is available in a repository.

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Abstract

The growth and magnetic properties of epitaxial magnetite Fe3O4 on GaAs(100) have been studied by reflection high-energy electron diffraction, x-ray photoelectron spectroscopy, magneto-optical Kerr effect, and x-ray magnetic circular dichroism. The epitaxial Fe3O4 films were synthesized by in situ post growth annealing of ultrathin epitaxial Fe films at 500K in an oxygen partial pressure of 5×10-5mbar . The XMCD measurements show characteristic contributions from different sites of the ferrimagnetic magnetite unit cell, namely, Fetd3+ , Feoh2+ , and Feoh3+ . The epitaxial relationship was found to be Fe3O4(100)//GaAs(100) with the unit cell of Fe3O4 rotated by 45° to match that of GaAs(100) substrate. The films show a uniaxial magnetic anisotropy in a thickness range of about 2.0-6.0nm with the easy axes along the [01¯1] direction of the GaAs(100) substrate.