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IOP Publishing, Japanese Journal of Applied Physics, No. 14(46), p. L317-L319, 2007

DOI: 10.1143/jjap.46.l317

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Investigation of non-radiative processes in InAs/(Ga,In)(N,As) quantum dots

Journal article published in 2007 by Maxime Hugues, Mirja Richter, Jean-Michel Chauveau, Benjamin Damilano ORCID, Jean-Yves Duboz, Jean Massies, Thierry Taliercio, Pierre Lefebvre, Thierry Guillet ORCID, Pierre Valvin, Thierry Bretagnon, Bernard Gil, Andreas D. Wieck
This paper is available in a repository.
This paper is available in a repository.

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Abstract

The photoluminescence (PL) properties of InAs/(Ga,In)(N,As) quantum dots (QDs) were analyzed and compared to those of InAs/(Ga,In)As QDs. While the PL intensity and the PL decay times of these samples are similar at low temperature, their decrease when the temperature increases is stronger in the case of InAs/(Ga,In)(N,As) QDs. This is attributed to a weaker confinement of the carriers and to the presence of structural defects as revealed by the analysis of plane-view and cross-section transmission electron microscopy images.