Published in
American Institute of Physics, Journal of Applied Physics, 6(77), p. 2849
DOI: 10.1063/1.359612
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Erratum: Raman scattering study of [hhk]‐GaAs/[Si or CaF(2)] strained heterostructures [J. Appl. Phys. 76, 2773 (1994)]
Journal article published in 1995 by
P. Puech,
G. Landa,
R. Carles,
P. S. Pizani 
,
E. Daran,
C. Fontaine
,
E. Daran,
C. Fontaine
This paper is made freely available by the publisher.
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