The Digital Electrostatically focused e-beam Array direct-write Lithography (DEAL) concept is currently under development at Oak Ridge National Laboratory (ORNL). This concept incorporates a digitally addressable field-emission array (DAFEA) built into a logic and control integrated circuit to function as the write head for an e-beam lithography tool. The electrostatic focusing is integrated on the DAFEA and consists of additional grids lithographically aligned above the emitters and extraction grid, each separated by a dielectric (nominally low-temperature SiO ₂ ) layer. Prototypes of the DAFEA have been fabricated and used to test the focusing of the electron beams and to pattern lines in PMMA resist. First lithography tests have used electron energies of 500 eV to pattern lines less than 1 μm wide at a working distance of 500 μm which extrapolates to ≪300 nm at the nominal DEAL design working distance of 100 μm. Aspects of the DEAL lithography testing and further development are discussed.