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Published in

American Institute of Physics, Applied Physics Letters, 23(95), p. 233502

DOI: 10.1063/1.3269931

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Amorphous silicon as electron transport layer for colloidal semiconductor nanocrystals light emitting diode

Journal article published in 2009 by Tao Song, Fute Zhang, Xiaojuan Shen, Xiaohong Zhang, Xiulin Zhu, Baoquan Sun ORCID
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

We demonstrate the fabrication of light-emitting diodes (LEDs) made from all-inorganic colloidal semiconducting nanocrystals (NCs). The diode utilizes a sandwich structure formed by placing CdSe/CdS NCs between two layers of Si and Ag x O , which act as electron- and hole-transporting materials, respectively. The photoluminescence properties of NCs are rendered less dependent upon surface chemistry and chemical environment by growing a thick CdS shell. It also enhances stability of the NCs during the process of magnetron sputtering for silicon deposition. The resulting LED device exhibits a low turn-on voltage of 2.5 V and the maximum external quantum efficiency of nearly 0.08%.