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Elsevier, Materials Letters, 29(57), p. 4483-4492

DOI: 10.1016/s0167-577x(03)00348-3

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Preparation of hydroxide-free magnesium oxide films by an alkoxide-free sol–gel technique

Journal article published in 2003 by S. Chakrabarti ORCID, D. Ganguli, S. Chaudhuri
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

Crystalline films of magnesium oxide (periclase and the “β”-phase) with or without magnesium hydroxide were deposited on soda lime glass and n-type silicon (100) substrates by sol–gel method with a view to controlling the formation of magnesium hydroxide and studying its role of hydroxide in the grain growth of MgO film. The gel films were crystallized by annealing at 500 °C (rapid thermal processing, RTP, or vacuum annealing) and 800 °C (air annealing). The phase assemblage was found to be dependent on the cleaning method of the substrate; when the cleaning method was essentially non-aqueous, no hydroxide crystallized in the annealed films. Aging of the annealed films under a humid atmosphere (65–75% relative humidity) led to the generation of Mg(OH)2 in freshly prepared (hydroxide-free) films and increase in its formation when it was already present. Hydroxide-free films showed significant growth in grain size compared to the other films, indicating a possible inhibiting role of the hydroxide in grain growth.