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IOP Publishing, New Journal of Physics, 2(10), p. 023034, 2008

DOI: 10.1088/1367-2630/10/2/023034

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Morphology of graphene thin film growth on SiC(0001)

Journal article published in 2008 by Taisuke Ohta, Farid El Gabaly, Aaron Bostwick, Jessica L. McChesney ORCID, Konstantin V. Emtsev, Andreas K. Schmid, Thomas Seyller, Karsten Horn, Eli Rotenberg
This paper is made freely available by the publisher.
This paper is made freely available by the publisher.

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Abstract

Epitaxial films of graphene on SiC(0001) are interesting from a basic physics as well as applications-oriented point of view. Here we study the emerging morphology of in-vacuo prepared graphene films using low energy electron microscopy (LEEM) and angle-resolved photoemission (ARPES). We obtain an identification of single and bilayer of graphene film by comparing the characteristic features in electron reflectivity spectra in LEEM to the PI-band structure as revealed by ARPES. We demonstrate that LEEM serves as a tool to accurately determine the local extent of graphene layers as well as the layer thickness.