We have studied the ground state properties of the intermediate valence narrow-gap semiconductor SmB6 by means of point-contact (PC) spectroscopy and specific heat measurements. The density of states derived from PC tunneling spectra could be decomposed into two energy-dependent parts with Eg=21meV and Ed=4.5meV wide gaps, and a finite residual density of states at the Fermi level. The specific heat of SmB6 is enhanced below about 2K, more pronounced for the sample with less impurities. This behavior can be attributed to the formation of a coherent state within the residual density of states in the energy gap.