American Institute of Physics, Journal of Vacuum Science and Technology B, 1(26), p. 435
DOI: 10.1116/1.2775459
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The influence of As on the evolution of mask-edge defects during stressed solid phase epitaxy of two-dimensional Si+ pre-amorphized regions in patterned Si wafers was examined. Mask-edge defects ∼60 nm deep formed at 525 °C for As+ implant energies of 7.5–50 keV with peak As concentration of ∼5.0×1020 cm-3. Defect formation was attributed to an As-enhanced [110] regrowth rate relative to the [001] regrowth rate creating an amorphous/crystalline interface geometry favorable for defect formation. The similarity of mask-edge defect depths with As+ implant energy was attributed to surface retardation of [110] regrowth in shallow implants and enhanced [001] regrowth in deeper implants. Results indicate stress effects on regrowth rates are small compared to dopant effects.