Published in
Society of Photo-optical Instrumentation Engineers, Proceedings of SPIE, 2002
DOI: 10.1117/12.514284
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<title>Metal nanoelectrodes for molecular transistor and investigation of electron transport in molecular systems</title>
Proceedings article published in 2002 by
D. B. Suyatin,
E. S. Soldatov,
Ivan Maximov 
,
Lars Montelius,
Lars Samuelson,
G. B. Khomutov,
S. P. Gubin,
A. N. Sergeev-Cherenkov
,
Lars Montelius,
Lars Samuelson,
G. B. Khomutov,
S. P. Gubin,
A. N. Sergeev-Cherenkov
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Abstract
Gold nanoelectrodes with gaps of less than 10 nm were formed by conventional E-beam lithography on silicon substrates covered by Al2O3. Molecular films were deposited on the electrodes by Langmuir-Shaefer technique. The I-V curves of such systems show a suppressed conductance indicating a correlated electron tunnelling through the system. All measurements were made at room temperature.