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Published in

Institute of Electrical and Electronics Engineers, IEEE Photonics Technology Letters, 4(21), p. 257-259, 2009

DOI: 10.1109/lpt.2008.2010556

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Efficiency Enhancement and Beam Shaping of GaN–InGaN Vertical-Injection Light-Emitting Diodes via High-Aspect-Ratio Nanorod Arrays

This paper is available in a repository.
This paper is available in a repository.

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Abstract

The enhanced light extraction and collimated output beam profile from GaN-InGaN vertical-injection light-emitting diodes (VI-LEDs) are demonstrated utilizing high-aspect-ratio nanorod arrays. The nanorod arrays are patterned by self-assembled silica spheres, followed by inductively coupled-plasma reactive ion etching. The fabricated nanorod arrays not only provide an omnidirectional escaping zone for photons, but also serve as waveguiding channels for the emitted light, resulting in a relatively collimated beam profile. The light output power of the VI-LED with nanorod arrays is enhanced by 40%, compared to a conventional VI-LED. The measured far-field profiles indicate that the enhancement is mainly along the surface normal direction, within a view angle of 20deg.