In this paper we present a growth of Ga1−xMnxN layers by metalorganic vapor-phase epitaxy (MOVPE). The analysis of the MOVPE deposition process of Ga1−xMnxN thin films revealed an unfavorable ratio between the apparent concentration of Mn in the gas phase and its doping level in the deposited layer. On the other hand, the incorporation of Mn has a positive effect on the resulting surface morphology. The optimal deposition temperature of 1000 °C was found out as a compromise between the layer quality and Mn concentration. We observed a ferromagnetic component persisting up to room temperature and a prevailing paramagnetic phase.