Ni-silicide/silicon Schottky contacts have been realised by promoting low-temperature Ni-Si interdiffusion during deposition (similar to 50 degrees C) and reaction (450 degrees C) on an oxygen-free [001] silicon surface. A 14 nm transrotational NiSi layer was produced made of extremely flat pseudo-epitaxial domains (similar to 200 nm in diameter). The current-voltage (I-V) characteristics (340-80 K) have indicated the presence of structural inhomogeneities which lower the Schottky barrier by Delta approximate to 0.1 eV. They have been associated with the core regions of the trans-domains (wherein the silicide lattice is epitaxially aligned to that of Si) since their density (similar to 2.5 x 10(9) cm(-2)) and dimension (similar to 10 nm) fit the I-V curves vs temperature following the Tung's approach. (C) 2011 The Japan Society of Applied Physics