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Elsevier, Microelectronics Journal, 5-8(34), p. 387-390, 2003

DOI: 10.1016/s0026-2692(03)00031-4

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Electrorefractive properties of modified five-layer asymmetric coupled quantum well (FACQW)

Journal article published in 2003 by T. Arakawa, K. Tada, R. Iino, T. Suzuki, J.-H. Noh, N. Haneji, H. Feng
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

We study in detail a modified structure of the five-layer asymmetric coupled quantum well (FACQW) for a large negative electrorefractive index change Δn. The influence of the layer thickness fluctuation on Δn of the modified FACQW is also discussed. Even with layer thickness fluctuation, the modified FACQW still maintains a much larger Δn than a conventional rectangular quantum well without thickness fluctuation. The results of photocurrent measurements of the modified FACQW qualitatively are in agreement with the theoretical analysis.