Published in
American Institute of Physics, Applied Physics Letters, 10(97), p. 101904
DOI: 10.1063/1.3487935
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Cathodoluminescence of GaInN quantum wells grown on nonpolar a plane GaN: Intense emission from pit facets
Journal article published in 2010 by
K. J. Fujan,
M. Feneberg 
,
B. Neuschl,
T. Meisch,
I. Tischer,
K. Thonke,
S. Schwaiger,
I. Izadi,
F. Scholz,
L. Lechner,
J. Biskupek,
U. Kaiser
,
B. Neuschl,
T. Meisch,
I. Tischer,
K. Thonke,
S. Schwaiger,
I. Izadi,
F. Scholz,
L. Lechner,
J. Biskupek,
U. Kaiser
This paper was not found in any repository, but could be made available legally by the author.
Full text: Unavailable
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Abstract
GaxIn1-xN quantum wells grown by metal organic vapor phase epitaxy on a plane GaN grown on r plane sapphire substrate typically show relatively large surface pits. We show by correlation of low temperature photoluminescence, cathodoluminescence, scanning and transmission electron microscopy that the different semipolar side facets of these pits dominate the overall luminescence signal of such layers.