Published in
American Institute of Physics, Journal of Applied Physics, 4(97), p. 043516, 2005
DOI: 10.1063/1.1832747
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Composition of Ge(Si) islands in the growth of Ge on Si(111) by x-ray spectromicroscopy
Journal article published in 2005 by
Fulvio Ratto,
Federico Rosei,
Andrea Locatelli 
,
Salia Cherifi,
Stefano Fontana,
Stefan Heun,
Pierre-David Szkutnik,
Anna Sgarlata,
Maurizio De Crescenzi,
Nunzio Motta
,
Salia Cherifi,
Stefano Fontana,
Stefan Heun,
Pierre-David Szkutnik,
Anna Sgarlata,
Maurizio De Crescenzi,
Nunzio Motta
This paper is available in a repository.
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