Published in
Institute of Electrical and Electronics Engineers, IEEE Electron Device Letters, 3(25), p. 135-137, 2004
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Self-aligned n-channel Germanium MOSFETs with a thin Ge Oxynitride gate dielectric and Tungsten gate. IEEE Electron Devic Lett
Journal article published in 2004 by
Huiling Shang,
Kam-Leung Lee,
P. Kozlowski,
C. D'Emic,
I. Babich,
E. Sikorski,
Meikei Ieong,
H.-S. P. Wong,
Kathryn Guarini,
W. Haensch
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Abstract
In this letter, we report self-aligned n-channel germanium (Ge) MOSFETs with a thin Ge oxynitride gate dielectric and tungsten gate electrode. Excellent off-state current is achieved through the reduction of junction leakage. For the first time, we have demonstrated an n-channel Ge MOSFET with a subthreshold slope of 150 mV/dec and an on-off current ratio of ∼104.