American Chemical Society, Nano Letters, 9(12), p. 4590-4594, 2012
DOI: 10.1021/nl301844z
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A two-dimensional (2D) electron gas system in an oxide heterostructure serves as an important playground for novel phenomena. Here, we show that, by using fractional δ-doping to control the interface's composition in La(x)Sr(1-x)TiO(3)/SrTiO(3) artificial oxide superlattices, the filling-controlled 2D insulator-metal transition can be realized. The atomic-scale control of d-electron band filling, which in turn contributes to the tuning of effective mass and density of the charge carriers, is found to be a fascinating route to substantially enhanced carrier mobilities.