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American Institute of Physics, Applied Physics Letters, 12(90), p. 122101

DOI: 10.1063/1.2715025

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Hydrogen peroxide treatment induced rectifying behavior of Au/n-ZnO contact

Journal article published in 2007 by C. C. Ling, A. M. C. Ng ORCID, X. D. Chen, C. K. Cheng, Qilin L. Gu, L. W. Lu, C. D. Beling, S. Fung, H. C. Ong, A. B. Djurisic, G. Brauer
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This paper is available in a repository.

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Abstract

Conversion of the Au /n- Zn O contact from Ohmic to rectifying with H 2 O 2 pretreatment was studied systematically using I-V measurements, x-ray photoemission spectroscopy, positron annihilation spectroscopy, and deep level transient spectroscopy. H 2 O 2 treatment did not affect the carbon surface contamination or the EC–0.31 eV deep level, but it resulted in a significant decrease of the surface OH contamination and the formation of vacancy-type defects (Zn vacancy or vacancy cluster) close to the surface. The formation of a rectifying contact can be attributed to the reduced conductivity of the surface region due to the removal of OH and the formation of vacancy-type defects.