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American Physical Society, Physical Review Letters, 12(109), 2012

DOI: 10.1103/physrevlett.109.126801

American Physical Society, Physical Review Letters, 1(109)

DOI: 10.1103/physrevlett.109.016801

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Angle-Dependent van Hove Singularities in a Slightly Twisted Graphene Bilayer

This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Data provided by SHERPA/RoMEO

Abstract

By combining scanning tunneling microscopy and spectroscopy, angle-resolved photoemission spectroscopy, and density functional theory band calculations, we directly observe and resolve the one-dimensional edge states of single bilayer (BL) Bi(111) islands on clean Bi_{2}Te_{3} and Bi(111)-covered Bi_{2}Te_{3} substrates. The edge states are localized in the vicinity of step edges having an ∼2  nm wide spatial distribution in real space and reside in the energy gap of the Bi(111) BL. Our results demonstrate the existence of nontrivial topological edge states of single Bi(111) bilayer as a two-dimensional topological insulator.