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American Institute of Physics, Applied Physics Letters, 12(98), p. 121903

DOI: 10.1063/1.3567549

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Photoluminescence characteristics of ZnCdO/ZnO single quantum well grown by pulsed laser deposition

Journal article published in 2011 by W. F. Yang ORCID, L. M. Wong, S. J. Wang, H. D. Sun ORCID, C. H. Ge, Alex Y. S. Lee, H. Gong ORCID
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

Optical properties of ZnCdO/ZnO single quantum well (SQW) grown on c-sapphire substrate by pulsed laser deposition were investigated. Temperature dependent photoluminescence (PL) measurement was performed from 10 to 300 K to study the carrier localization effect and peak evolution. The LO-phonon replicas up to third order with Huang–Rhys factor of 0.17 were observed. The SQW exhibited very strong PL from the well layer and extremely weak emission from the ZnO barriers, indicating high quality interfaces and highly efficient relaxation.