Published in
American Institute of Physics, Applied Physics Letters, 19(96), p. 192102
DOI: 10.1063/1.3428434
Links
Tools
Thin-film transistors based on p-type Cu2O thin films produced at room temperature
Journal article published in 2010 by
Elvira Fortunato,
Vitor Figueiredo,
Pedro Barquinha 
,
Elangovan Elamurugu,
Raquel Barros,
Gonçalo Goncalves,
Sang-Hee Ko Park,
Chi-Sun Hwang,
Rodrigo Martins
,
Elangovan Elamurugu,
Raquel Barros,
Gonçalo Goncalves,
Sang-Hee Ko Park,
Chi-Sun Hwang,
Rodrigo Martins
This paper is available in a repository.
Full text: Download
Data provided by 
Abstract
Copper oxide ( Cu 2 O ) thin films were used to produce bottom gate p-type transparent thin-film transistors (TFTs). Cu 2 O was deposited by reactive rf magnetron sputtering at room temperature and the films exhibit a polycrystalline structure with a strongest orientation along (111) plane. The TFTs exhibit improved electrical performance such as a field-effect mobility of 3.9 cm 2/ V s and an on/off ratio of 2×102 .