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ECS Meeting Abstracts, 18(MA2013-01), p. 791-791, 2013

DOI: 10.1149/ma2013-01/18/791

The Electrochemical Society, ECS Transactions, 4(53), p. 81-84, 2013

DOI: 10.1149/05304.0081ecst

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(Invited) Optimizing Er-Doped Layer Stacks for Integrated Light Emitting Devices

Journal article published in 2013 by Joan Manel Ramirez, Yonder Berencen ORCID, Luis Lopez-Conesa ORCID, Jose Maria Rebled, Alberto Eljarrat ORCID, Sonia Estrade ORCID, Francisca Peiro, J. M. Fedeli, Blas Garrido
This paper is made freely available by the publisher.
This paper is made freely available by the publisher.

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Abstract

A detailed itinerary of our main results and current advances in Er-doped light emitting devices are here reported. We start with the photoluminescence, then the electrical characterization and the electroluminescence of Er-doped capacitors and active slot waveguides. Finally a summary of the ongoing work focused on the combination of Er-doped semiconductor superlattices with more complex devices such as slot-based ring resonators or metal-oxide-semiconductor-field-effect transistors is presented