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Institute of Electrical and Electronics Engineers, IEEE Photonics Technology Letters, 6(20), p. 413-415, 2008

DOI: 10.1109/lpt.2008.916926

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Resonant-Cavity-Enhanced Single-Photon Avalanche Diodes on Reflecting Silicon Substrates

Journal article published in 2008 by Massimo Ghioni, Giacomo Armellini, Piera Maccagnani ORCID, Ivan Rech, Matthew K. Emsley, M. Selim Unlu
This paper is available in a repository.
This paper is available in a repository.

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Abstract

In this letter, we report the first resonant-cavity-enhanced single-photon avalanche diode (RCE SPAD) fabricated on a reflecting silicon-on-insulator (SOI) substrate. The substrate incorporates a two-period distributed Bragg reflector fabricated using a commercially available double-SOI process. The RCE SPAD detectors have peak photon detection efficiencies ranging from 42% at 780 nm to 34% at 850 nm and time resolution of 35-ps full-width at half-maximum. Typical dark count rates of 450, 3500, and 100 000 c/s were measured at room temperature with RCE SPADs having, respectively 8-, 20-, and 50-mum diameter.