Dissemin is shutting down on January 1st, 2025

Published in

phys. stat. sol. (c), 7(0), p. 2666-2669

DOI: 10.1002/pssc.200303270

Links

Tools

Export citation

Search in Google Scholar

Optical properties of GaN/AlN quantum boxes under high photo-excitation

This paper is made freely available by the publisher.
This paper is made freely available by the publisher.

Full text: Download

Red circle
Preprint: archiving forbidden
Orange circle
Postprint: archiving restricted
Red circle
Published version: archiving forbidden
Data provided by SHERPA/RoMEO

Abstract

Piezoelectric effects on the optical properties of GaN/AlN quantum dots have been investigated by both continuous-wave and time-resolved photoluminescence (TRPL) measurements. The increase in excitation density in CW-PL leads to a blue shift of the transition energy. The TRPL measurements reveal a very large blue-shift (0.6 eV) of the PL peak energy, which reduces with time delay in a complex way, due to the strong transition-energy dependence of the carrier recombination time. The results are discussed in terms of respective roles played by the population of excited levels and by the screening of internal electric fields by accumulation of electron-hole dipoles in the quantum boxes. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.