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Elsevier, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1-4(188), p. 179-182

DOI: 10.1016/s0168-583x(01)01071-0

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The properties of β-FeSi2 fabricated by ion beam assisted deposition as a function of annealing conditions for use in solar cell applications

Journal article published in 2002 by C. N. McKinty, K. J. Kirkby, K. P. Homewood, S. P. Edwards, G. Shao ORCID, R. Valizadeh, J. S. Colligon
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This paper is available in a repository.

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Abstract

In this paper we investigate the formation of β-FeSi2 (from co-deposited layers of Fe and Si produced by ion beam assisted deposition) under a number of annealing regimes (annealing temperatures between 100 and 900 °C and times up to 18 h) by optical characterisation of the band edge parameters. The results have indicated that both annealing temperatures and times have a strong effect on the number of defects underneath the fundamental edge of absorption. The measurement temperature dependency of the band gap is also found to be dependent on the annealing conditions.