Silicon carbide (SiC) is the third hardest material after diamond and boron nitride, which gives SiC its excellent properties such as high-temperature stability, imperviousness to chemical attack, and biological compatibility. This chapter explores the various methods commonly used to synthesize silicon carbide, starting with chemical vapor deposition (CVD), since this method can be used to form most types of SiC. Following this, it provides a review of methods that have been employed to form amorphous SiC coatings, which is an area of intense interest in biomedical device technology. Silicon carbide is a versatile material with a myriad of applications, from its traditional place in power electronics to radiation sensors, optoelectronics and, as applies to the present topic, biomedical applications. This chapter provides details about the technology involved in forming both bulk and film forms of SiC, where it highlights that the three solid phases of SiC, amorphous, polycrystalline, and single crystal, are all readily manufacturable with varying properties and utility.