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Elsevier, Surface Science, 1-3(511), p. L293-L297

DOI: 10.1016/s0039-6028(02)01571-6

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Coverage dependent dissociation of NO on Rh supported on cerium oxide thin films

Journal article published in 2002 by D. R. Mullins, S. H. Overbury ORCID
This paper is available in a repository.
This paper is available in a repository.

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Abstract

The decomposition of NO on Rh on oxidized and reduced cerium oxide was studied as a function of NO coverage and temperature by soft X-ray photoelectron spectroscopy. The degree of decomposition is increased and the onset temperature for decomposition is reduced when Rh is supported on reduced ceria (Rh/CeOx) compared to Rh on oxidized ceria (Rh/CeO2). When the initial NO coverage was reduced to 35% of saturation the dissociation activity was enhanced on both Rh/CeO2 and Rh/CeOx. However, at any given temperature and coverage, the dissociation activity was greater on Rh/CeOx. O vacancies on the reduced CeOx were poisoned by exposure to H2O at 300 K to produce a hydroxylated surface. The NO dissociation activity for Rh on the hydroxylated CeOx was the same as that on the open surface. These results demonstrate that O spillover and coverage effects are insufficient to explain the enhanced activity of Rh on reduced CeOx.