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American Institute of Physics, Applied Physics Letters, 22(95), p. 223303

DOI: 10.1063/1.3269579

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Low-voltage solution-processed n-channel organic field-effect transistors with high- k HfO2 gate dielectrics grown by atomic layer deposition

This paper is available in a repository.
This paper is available in a repository.

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Abstract

Cited By (since 1996): 9, Export Date: 10 November 2012, Source: Scopus, Art. No.: 223303, CODEN: APPLA, doi: 10.1063/1.3269579, Language of Original Document: English, Correspondence Address: Kippelen, B.; Center for Organic Photonics and Electronics (COPE), School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332, United States; email: kippelen@gatech.edu, References: Comiskey, B., Albert, J.D., Yoshizawa, H., Jacobson, J., An electrophoretic ink for all-printed reflective electronic displays (1998) Nature, 394 (6690), pp. 253-255. , DOI 10.1038/28349;