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2007 Conference on Lasers and Electro-Optics (CLEO)

DOI: 10.1109/cleo.2007.4452490

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InP/AlGaInP on GaAs Quantum Dot Lasers

Journal article published in 2007 by P. M. Smowton ORCID, M. Al-Ghamdi, A. B. Krysa
This paper is available in a repository.
This paper is available in a repository.

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Abstract

MOVPE grown InP q-dot lasers have low 300K threshold current density (195 Acm-2 for 2000μm long device) and T0=105K (10-85°C) for 725-740nm emission. Homogenous broadening appears to be more pronounced than in InGaAs q-dots.