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American Institute of Physics, Applied Physics Letters, 6(90), p. 063502

DOI: 10.1063/1.2458457

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Stability of transparent zinc tin oxide transistors under bias stress

Journal article published in 2007 by P. Gorrn, P. Holzer, T. Riedl ORCID, W. Kowalsky, J. Wang, T. Weimann, P. Hinze, S. Kipp
This paper is available in a repository.
This paper is available in a repository.

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Abstract

Shifts in the threshold voltage (ΔV th ) of transparent zinc tin oxide (ZTO) transistors under gate bias stress are studied. The effect of composition and processing temperature on the device stability has been investigated. Based on the research, highly stable transistors with ΔV th as small as 30 mV after 1000 min of operation have been fabricated with a composition of [ Zn ]:[ Sn ]=36:64 . As current drivers in active matrix displays their stability renders ZTO thin film transistors (TFTs) a very attractive alternative to TFTs based on established technologies.