International Conference on Solid State Crystals '98: Single Crystal Growth, Characterization, and Applications
DOI: 10.1117/12.343016
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Growth conditions for Nd:YVO4 crystals and some optical properties are presented. The obtained Nd: YVO4 crystal shows lower content of point defects and consequently, lower susceptibility to ionising radiation. ESR measurements show the presence of V ions in interstitial sites with another than 5t valency. Obtained by Czochralski method crystals reveal very good optical properties, some of which are better than for Nd: YAG.