A high response organic deep ultraviolet (DUV) photodetector (PD) with 280 nm as the response spectrum peak was demonstrated. A maximum photoresponse of 309 mA/W under 280 nm UV illumination with an intensity of 0.428 mW/cm2 and a detectivity of 1×1012 cmHz1/2/W at -8 V were achieved, respectively. The optimized PD diode has a structure of ITO/m-MTDATA (10 nm)/m-MTDATA:Bphen(1:1, 60 nm)/Bphen (10 nm)/Cs2CO3:Bphen (30wt%,10 nm)/Al(12 nm)/TPD(40 nm). Under 280 nm constant and shuttered illumination conditions with an intensity of 0.18 mW/cm2 the operational time is longer than 440 minutes when its response respectively decreases to 50% and 83% of its original value. The realization of the DUV detection is attributed to the stronger absorption of shorter UV wavelengths of Bphen acceptor and covering UV waveband longer than 300 nm by the TPD layer. The more detailed mechanism of harvesting the high PD performance is also discussed.