American Institute of Physics, Applied Physics Letters, 24(88), p. 241923
DOI: 10.1063/1.2213176
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Photoluminescence efficiency was enhanced in molecular-beam-epitaxial-grown 1.55-μm GaInNAsSb single quantum wells through modulation of the arsenic and antimony fluxes. The arsenic-to-antimony flux ratio was found to be a key consideration at reduced group-V fluxes in maintaining the beneficial effects of antimony while reducing the number of point defects, most likely arsenic antisites. Samples were also characterized by high-resolution x-ray diffraction, secondary ion mass spectrometry, and low-temperature photoluminescence. These findings offer a means to substantially reduce dilute-nitride laser threshold current densities.