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Physics, Chemistry and Applications of Nanostructures

DOI: 10.1142/9789814343909_0050

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The anisotropy of electrical properties of InGaAs/GaAs heterostructures with chains of InGaAs quantum dots

Proceedings article published in 2011 by Vakulenko Ov, O. V. Vakulenko, S. L. Golovynskyi ORCID, Golovynskyi Sl, S. V. Kondratenko, Kondratenko Sv
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This paper is available in a repository.

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Abstract

InGaAs/GaAs heterostructures with the chains of quantum dots were studied. The anisotropy of electrical properties of the structures in the temperature range of 77-150 K was found by measurements of dark current. The dark current conductivity temperature dependence can be described by the Shklovskii-Efros law of variable range hopping conductivity. The energy states of the heterosystem were investigated by the lateral photocurrent and photoluminescence spectroscopy measurements.