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American Institute of Physics, Applied Physics Letters, 17(99), p. 172108

DOI: 10.1063/1.3657146

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Temperature dependance of the tunneling density of states in sub-micron planar metal/oxide/graphene junctions

Journal article published in 2011 by S. Hacohen-Gourgy, I. Diamant, B. Almog, Y. Dubi ORCID, G. Deutscher
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

We present tunneling measurements of sub-micron metal/insulator/graphene planar tunnel junctions up to room temperature. We observe a gate independent gap, as previously observed only by low temperature STM[Y. Zhang et al., Nat. Phys. 4, 627 (2008)]. No gap appears at temperatures above 150K, which is four times smaller than the theoretically expected $T_{c}$, from the accepted mean field model[T. O. Wehling et al. Phys. Rev. Lett. 101, 216803 (2008)]. We show that taking into account an additional vibrational effect of out-of-plane phonon soft modes the gap may disappear from the measurements at temperatures much lower than the calculated $T_{c}$. ; Comment: http://link.aip.org/link/?APL/99/172108