The time-resolved reflectivity of c-Si irradiated by 48-ps pulses of one-micron laser radiation is presented. It is found that melting can occur on a picosecond time scale and that evaporation of material follows within 5 ps of melting or less and strongly influences the measurements of the surface reflectivity. Without this knowledge, others have been misled to assume the possibility of delayed melting. Our data therefore explain various discrepancies outstanding in the literature regarding laser-induced melting of c-Si at this wavelength. The presence of evaporated material shields the surface from the more intense pulses and this in effect limits the depth of penetration of the liquid phase to quite shallow layers close to the surface.