Published in
American Institute of Physics, Applied Physics Letters, 11(88), p. 112113
DOI: 10.1063/1.2186507
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Characterization of ultrasmall all-Nb tunnel junctions with ion gun oxidized barriers
Journal article published in 2006 by
Hyunsik Im,
Y.-U. A. Pashkin 
,
T. Yamamoto,
O. Astafiev,
Y. Nakamura,
J. S. Tsai
,
T. Yamamoto,
O. Astafiev,
Y. Nakamura,
J. S. Tsai
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Abstract
We have fabricated ultrasmall all-Nb tunnel junctions and single electron transistors using shadow evaporation combined with in situ ion gun oxidation. Basic parameters of the Nb/Nb-oxide/Nb junctions, namely, the barrier height, width, and specific junction capacitance, are estimated from the transport characteristics.