Published in
American Institute of Physics, Applied Physics Letters, 5(96), p. 053116
DOI: 10.1063/1.3309670
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Negative differential resistance in GaN nanowire network
Journal article published in 2010 by
M. Dragoman 
,
G. Konstantinidis,
A. Cismaru,
D. Vasilache,
A. Dinescu,
D. Dragoman,
D. Neculoiu,
R. Buiculescu,
G. Deligeorgis,
Vajpeyi Ap,
A. P. Vajpeyi,
A. Georgakilas,
Others
,
G. Konstantinidis,
A. Cismaru,
D. Vasilache,
A. Dinescu,
D. Dragoman,
D. Neculoiu,
R. Buiculescu,
G. Deligeorgis,
Vajpeyi Ap,
A. P. Vajpeyi,
A. Georgakilas,
Others
This paper is available in a repository.
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Abstract
Negative differential resistance of gallium nitride nanowire networks deposited on an interdigitated electrode configuration patterned on a silicon dioxide/high resistivity Si substrate is experimentally demonstrated at room temperature. This effect is attributed to tunnelling between crossed gallium nitride nanowires.