In the present paper we have studied the peculiarities of carrier transport properties of nano-heterostructures containing silicon substrate covered with porous silicon layer, where pores were either filled or non-filled with ferromagnetic Ni clusters. We have carried out DC conductivity experiments as a function of temperature (ranging from 2 to 300 K) and porosity of porous silicon layer (between 30% and 70%). Presence of a surface layer with high resistance on the porous silicon top and its role in nano-heterostructure formation was revealed. It was shown that specific electrochemical kinetics of Ni deposition into porous silicon significantly influences resultant nanostructure resistance and high temperature conductance activation energy.