A wide bandwidth low actuation voltage RF MEMS capacitive shunt switch is designed and simulated. The proposed switch is designed for a low actuation voltage of 12 volts applicable to wireless systems. High frequency characteristics of the RF MEMS switches can be specified by coupling capacitors in up-state position C u . This capacitor is in trade-off with actuation voltage. In the proposed switch, the capacitor is compensated by incorporating two short high impedance transmission lines as a T matching circuit. Simulating the switch demonstrates great improvement in RF characteristics of the switch particularly in reflection coefficient in up-state position.