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American Chemical Society, ACS Nano, 2(8), p. 1584-1589, 2014

DOI: 10.1021/nn405867p

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X-ray Irradiation Induced Reversible Resistance Change in Pt/TiO2/Pt Cells

This paper is made freely available by the publisher.
This paper is made freely available by the publisher.

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Abstract

The interaction between x-rays and matter is an intriguing topic for both fundamental science and possible applications. In particular, synchrotron-based brilliant x-ray beams have been used as a powerful diagnostic tool to unveil nanoscale phenomena in functional materials. However, it has not been widely investigated how functional materials respond to the brilliant x-rays. Here, we report the x-ray-induced reversible resistance change in 40-nm-thick TiO2 films sandwiched by Pt top and bottom electrodes, and propose the physical mechanism behind the emergent phenomenon. Our findings indicate that there exists a photovoltaic-like effect, which modulates the resistance reversibly by a few orders of magnitude, depending on the intensity of impinging x-rays. We found that this effect, combined with the x-ray irradiation induced phase transition confirmed by transmission electron microscopy, triggers a non-volatile reversible resistance change. Understanding x-ray-controlled reversible resistance changes can provide possibilities to control initial resistance states of functional materials, which could be useful for future information and energy storage devices.