Trans Tech Publications, Materials Science Forum, p. 485-488
DOI: 10.4028/0-87849-963-6.485
Trans Tech Publications, Materials Science Forum, (483-485), p. 485-488, 2005
DOI: 10.4028/www.scientific.net/msf.483-485.485
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Deep-Level Transient Spectroscopy and room temperature photoluminescence were used to characterise a 6H-SiC epitaxial layer irradiated with 10 MeV C+ and to follow the defect annealing in the temperature range 300-1400 ° C. The intensity of luminescence peak at 423 nm, related to band to band transitions, decreases after irradiation and it is slowly recovered after annealing in the temperature range 1000-1400 ° C. The DLTS spectra of low temperature annealed samples show the presence of several overlapping traps, which anneal and evolve at high temperatures. After 1200 ° C a main level at E,443 eV (E-1/E-2) is detected. The comparison between luminescence and DLTS results indicates that the defect associated with the E-1/E-2 level is mainly responsible for the luminescence quenching after irradiation.