Published in
American Institute of Physics, Applied Physics Letters, 3(107), p. 032106
DOI: 10.1063/1.4927405
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Impact of residual carbon impurities and gallium vacancies on trapping effects in AlGaN/GaN metal insulator semiconductor high electron mobility transistors
Journal article published in 2015 by
Martin Huber 
,
Marco Silvestri,
Lauri Knuuttila,
Gianmauro Pozzovivo,
Andrei Andreev,
Andrey Kadashchuk,
Alberta Bonanni ,
Anders Lundskog
,
Marco Silvestri,
Lauri Knuuttila,
Gianmauro Pozzovivo,
Andrei Andreev,
Andrey Kadashchuk,
Alberta Bonanni ,
Anders Lundskog
This paper is available in a repository.
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