Elsevier, Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1(652), p. 146-148
DOI: 10.1016/j.nima.2011.01.162
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We quantified the size and concentration of Te-inclusions along the lateral- and the growth-directions of a 6 mm thick wafer cut axially along the center of a CdZnTe ingot. We fabricated devices, selecting samples from the center slice outward in both directions, and then tested their response to incident x-rays. We employed, in concert, an automated IR transmission microscopic system and a highly collimated synchrotron X-ray source that allowed us to acquire and correlate comprehensive information on Te inclusions and other defects to assess the material factors limiting the performance of CdZnTe detectors.