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56th Electronic Components and Technology Conference 2006

DOI: 10.1109/ectc.2006.1645644

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Thermal interface material with aligned CNT and its application in HB-LED packaging

Proceedings article published in 1970 by K. Zhang, M. M. F. Yuen, N. Wang ORCID, J. Y. Miao, D. G. W. Xiao, H. B. Fan
This paper was not found in any repository, but could be made available legally by the author.
This paper was not found in any repository, but could be made available legally by the author.

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Abstract

High density well aligned vertical CNT arrays were synthesized by thermal chemical vapor deposition (CVD) method on 1 inch by 1 inch Si substrates with sputtered Ti and Si layers. They were used as a new kind of thermal interface material (TIM) for the thermal management of microelectronic packages and high brightness light emitting diode (HB-LED) packages. The thermal resistance of the CNT-array-TIM and some other TIM were evaluated and compared according to ASTM D5470 standard. The thermal resistance of CNT-array-TIM was found to be 15 mm2-K/W which was only 20% of that of the commercial silver epoxy. The mechanism of the phonon heat transfer through the CNT-array-TIM was reviewed. The application performance of CNT-array-TIM in HB-LED packages was predicted by finite element analysis using ANSYS code. It was concluded that CNT arrays synthesized by the simple thermal CVD procedure is a promising low cost and effective TIM