In this paper the electrical characteristics of different atomic layer deposited (ALD) high permittivity dielectric films (Al2O3 and Al2O3/HfO2 nanolaminates) subjected to ion irradiation (25MeV oxygen ions and 10MeV protons) are evaluated. The capacitance–voltage (C–V) and current–voltage (I–V) characterization show that high-κ nanolaminates are more tolerant to radiation than the Al2O3 layers, but suffer radiation soft breakdown (RSBD) events. The main variation on the electrical characterization could be interpreted as a gradual decrease of the dielectric constant and/or as an increase of the series resistance of the device.